Weizhong Wang - Associate Professor



Contact Information

Office Address:
EMS 1285
3200 North Cramer Street
Milwaukee, WI 53211
Phone: 414-229-2247
Fax: 414-229-2769
Email: wwang@uwm.edu
WWW:

Mailing Address:
P.O. Box 784
Department of Electrical Engineering and Computer Science
University of Wisconsin-Milwaukee
Milwaukee, WI 53201-0784

Weizhong Wang

Education

Ph.D., University of Maryland at College Park, 1998

Research Interests

Electronics, Circuits Design, Semiconductor Devices, Semiconductor Processing Technology, spintronics, magnetic bio-sensors, microelectronics, nanoelectronics, anti-tampering integrated circuits and radiation hardened integrated circuits

Selected Publications

  1. “Thermally Assisted Magnetic Tunneling Junction for Bio-sensing Applications” W. Wang and Z. Jiang IEEE Transactions on Magnetic, (accepted for publication)
  2. “Magnetic Content Addressable Memories” W. Wang and Z. Jiang, 10th Joint MMM/Intermag Conference, Baltimore, MD Jan. 7-11, 2007
  3.  “Ultra Sensitive Magnetic Bio-sensors” W. Wang and Z. Jiang, 10th Joint MMM/Intermag Conference, Baltimore, MD Jan. 7-11, 2007
  4. “Sense Amplifier Based RADHARD Flip Flop Design” W. Wang, and H. Gong. IEEE Transaction on Nuclear Science. (Accepted)
  5. “Edge Triggered Pulse Latch Design with Delayed Latching Edge for Radiation Hardened Application” W. Wang, and H. Gong. IEEE Transaction on Nuclear Science. (Accepted)
  6. “Flip Flop Design with Self Timed Latching Edge for Radiation Hardened Application” Weizhong Wang and Haiyan Gong 41th IEEE Nuclear and Space Radiation Effects Conference, Atlanta, GA July 19-23 2004.
  7. “High Performance Radiation Hardened Flip Flop Design” Weizhong Wang 41th IEEE Nuclear and Space Radiation Effects Conference, Atlanta, GA July 19-23 2004.
  8. “RC Hardened FPGA configuration SRAM cell design” W. Wang, IEE Electronics Letters, Vol 40. Number 9 29th April 2004 pp. 525- 526
  9. “High Performance Single Event Free Flip Flop Design” W. Wang Fourteenth Biennial Single Event Effects Symposium, Manhattan Beach, CA. April 26-29, 2004
  10. “High performance Radiation Hardened Register Cell Design on Standard CMOS Process” W. Wang Proceeding of 2003 IEEE Electron Devices and Solid State Circuits conference.p513-515. IEEE Catalog Number 03TH8668
  11. W. Wang and H. Gong “Ultra Low Power Pulse Mode Low Noise Amplifier for UWB Impulse Radio Receiver”, 6th IEEE Wireless and Microwave technology conference. Clearwater FL. April 15-16, 2004
  12. “Dependence of HCI Mechanism on Temperature for 0.18um Technology and
    Beyond” W.Wang, J.Tao, P.Fang 1999 IEEE International Integrated Reliability Workshop, Lake Tahoe, CA. Oct. 18-21, 1999 Page 66-68 IEEE Catalog Number 99TH8460
  13. “50nm Gate-Length CMOS Transistor with Super-Halo: Design, Process, and Reliability” Bin Yu, Haihong Wang, Ognjen Milic, Qi Xiang, Weizhong Wang Judy An Ming-Ren Lin 1999 IEEE International Electron Device Meeting. Washington DC. Page 653-656 IEEE Catalog Number: 99CH36318
  14. “Fabrication and Characterization of buried subchannel implant nMOS transistors” W.Wang, D. McCarthy, D.Park, D.Ma, C.Marrian, M. Peckerar, J.Melngalis, I.Berry. Journal of Vacuum Science and Technology B 16(6) pp3812 -3816, 1998
  15. “Fabrication and Characterization of Sub-channel Implant nMOS Devices” W.Wang, D. McCarthy, D.Park, D.Ma, C.Marrian, M. Peckerar, J.Melngalis, I.Berry. The 42nd International Conference on Electron, Ion and Phonton beam Technology and Nanofabrication Chicago, IL 60611. May 26-29, 1998 Page. NDP8
  16. “Self-Aligned Sub-Channel Implant CMOS Devices Fabrication” Weizhong Wang, Chienhwa Chang, Martin Peckerar, Ivan Berry, Neil Goldsman, John Melngailis The 41st International Conference on Electron, Ion and Phonton beam Technology and Nanofabrication Dana Point, CA.May27-30, 1997 Page 120-121
  17. “Self-aligned sub-channel implanted CMOS Device Fabrication” Weizhong Wang, Chienhwa Chang, Martin Peckerar, Ivan Berry, Neil Goldsman, John Melngailis Journal of Vacuum Science and Technology B 15(6) pp2816-2819, 1997
  18. “High-Brightness Ion Source for Ion Projection Lithography” S. K. Guharay, W.Wang, V.Dudnikov M.Reiser, J. Orloff, J. Melngailis, The 40th International Conference on Electron, Ion and Phonton beam Technology and Nanofabrication, Atlanta, GA. May 29-31, 1996
  19. “High-Brightness Ion Source for Ion Projection Lithography” S. K. Guhary, W. Wang, V.Dudnikov M. Reiser, J. Orloff, J. Melngailis, Journal of Vacuum Science and Technology B 14(6) 1996
  20. “Noiseless, High-Current Density H- Beam from a Magnetron-type Ion Source” W.Wang, S.K.Guharay, M.Reiser, V. Dudnikov, Joint Meeting of the seventh International Symposium on the Production and Neutralization of Negative Ions and Beams and Sixth European Workshop on the Production and Application of Light Negative Ions. Oct. 23-27, 1995 at Brookhaven National Laboratory.